Free Downloads Mosfet Modeling For VLSI Simulation: Theory And Practice (International Series On Advances In Solid State Electronics) (International Series On Advances In Solid State Electronics And Technology)
The book deals with the MOS Field Effect Transistor (MOSFET) models that are derived from basic semiconductor theory. Various models are developed, ranging from simple to more sophisticated models that take into account new physical effects observed in submicron transistors used in today's (1993) MOS VLSI technology. The assumptions used to arrive at the models are emphasized so that the accuracy of the models in describing the device characteristics are clearly understood. Due to the importance of designing reliable circuits, device reliability models are also covered. Understanding these models is essential when designing circuits for state-of-the-art MOS ICs.
Hardcover: 632 pages
Publisher: World Scientific Publishing Company (February 14, 2007)
Language: English
ISBN-10: 981256862X
ISBN-13: 978-9812568625
Product Dimensions: 6.4 x 1.2 x 9 inches
Shipping Weight: 2.5 pounds (View shipping rates and policies)
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Best Sellers Rank: #3,162,212 in Books (See Top 100 in Books) #69 in Books > Engineering & Transportation > Engineering > Electrical & Electronics > Electronics > Solid State #122 in Books > Engineering & Transportation > Engineering > Electrical & Electronics > Circuits > VLSI & ULSI #594 in Books > Engineering & Transportation > Engineering > Electrical & Electronics > Electronics > Semiconductors
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