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Operation And Modeling Of The MOS Transistor (The Oxford Series In Electrical And Computer Engineering) Series: The Oxford Series in Electrical and Computer Engineering

Hardcover: 752 pages

Publisher: Oxford University Press; 3 edition (September 24, 2010)

Language: English

ISBN-10: 0195170156

ISBN-13: 978-0195170153

Product Dimensions: 9.4 x 1.2 x 7.6 inches

Shipping Weight: 2.9 pounds (View shipping rates and policies)

Average Customer Review: 4.3 out of 5 stars See all reviews (6 customer reviews)

Best Sellers Rank: #509,256 in Books (See Top 100 in Books) #14 in Books > Engineering & Transportation > Engineering > Electrical & Electronics > Electronics > Solid State #24 in Books > Engineering & Transportation > Engineering > Electrical & Electronics > Electronics > Transistors #81 in Books > Engineering & Transportation > Engineering > Electrical & Electronics > Electronics > Semiconductors

This review is for the third-edition (ISBN 978-0-19-517015-3) of this book. All other reviews by others prior to this review are for the second-edition (ISBN 0-19-517014-8). However, all other reviews are still applicable to the third-edition.As other reviewers already pointed out, this is a great electrical/electronics engineering textbook. The third-edition has been extensively revised and 700-page long while the second-edition is 600-page long. I have absolutely no doubt in my mind that people who enjoyed the second-edition will also enjoy the third-edition even more and will feel that the contents of the book are up-to-date.The mathematical requirements to understand this book are introductory differential and integral calculus. And one must be willing to sit down with a pencil and paper to derive many equations in the book. Furthermore, one must have ready access to computer with mathematical software such as MATLAB with Optimization Toolbox installed. I found myself using MATLAB commands such as "fsolve" a lot to plot the graphs that I see on the book.This book covers only Si (silicon) bulk MOS transistors and does not cover the following MOS topics.SOI transistorsGaAs/InP transistorsRF modelingIn my opinion, the authors intended to write a textbook, not an encyclopedia. And it becomes very clear why some topics are left out of the book as one reads through the book. The books/papers covering missing topics are listed in Bibliography section at the end of each chapter. The authors never use a term such as "It is easy to see..." and skip explanations of certain topics in the book. If a topic needs to be explained, the authors went great lengths to explain the topic.

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